Device geometry optimization_Cylindrical GAA_ CNTFET_10nm Channel Giving High SS

[techenthusiast]

Dear All,

To ask :
Good morning. I have attached a one.py structure file of Cylindrical GAA CNT FET OF 10nm Channel length. The observation is that it provides high SS, 216mV/Decade. This may be due to the Short-channel Effect. Kindly advise if there is any provision to optimize the device geometry for better performance regarding electrical parameters of an FET such as SS, and Ioff...

Thank You.

[techenthusiast]

Dear All,

Also,  As per NEGF Formation we can make only single channel CNT (10,0) using  "Device from bulk " . Is that possible to make multiple CNT Channel using the same formation with single Source or drain electrode & corresponding electrode extensions?  Thank You.