If i have a graphene 2 probe device with source, channel drain, there is a requirement to have the electrode repeated in the channel region .. if my electrodes are created n and p type by doping with specific location of Boron and Nitrogen atoms, and I want to show variation, this is a problem .. for example, if i have an electrode, and to dope it, i can add some dopant atoms in particular locations ... now if i want to see the effect of one of these dopant atoms being placed in the wrong location, i cannot do it, because moving one atom, with automatically require that same atom moved in the mirrored section inside the channel ... so .. is there any way around this requirement?