Author Topic: magnetic tunnel junction  (Read 15982 times)

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Offline sahil

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Re: magnetic tunnel junction
« Reply #15 on: March 25, 2012, 10:35 »
dear all
i calculated the TMR for CoFe-mgo at different bias voltage. but my result seems to be incorrect because the conductance and current for both the configuration gives different values of TMR by formula

(Rap-Rp)/Rp and (Ip-Iap)/Iap
means in short it is not follow the ohm's law

i am not getting this difference please help me
and give me a idea for parallel resistance value for 6 atom thick barrier device with electrode length of 5.845A.(if you have)?????
« Last Edit: March 26, 2012, 07:00 by sahil »

Offline Anders Blom

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Re: magnetic tunnel junction
« Reply #16 on: March 26, 2012, 22:11 »
They are supposed to be different. You can Google a bit about the "pessimistic" and "optimistic" definition of the TMR to learn more.

Besides, since when would you expect tunneling devices to follow Ohm's law? The fact that they don't is the whole point we do these calculations ;)
« Last Edit: March 26, 2012, 22:14 by Anders Blom »

Offline sahil

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Re: magnetic tunnel junction
« Reply #17 on: March 27, 2012, 07:47 »
I am really sorry for such mistake, infect i was confused by an paper in which it looks like to follow ohm's law
 ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=5941929

thanks  :) :D ;D
« Last Edit: March 27, 2012, 07:51 by sahil »

Offline sahil

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Re: magnetic tunnel junction
« Reply #18 on: March 29, 2012, 11:42 »
hiiii blom sir 8)
how can i find lattice mismatch between electrode and barrier layer using atk-vnl? :-[
plz reply me  >:(
« Last Edit: April 2, 2012, 12:05 by sahil »

Offline kstokbro

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Re: magnetic tunnel junction
« Reply #19 on: April 2, 2012, 22:34 »
In the new ATK12.2 there is an interface builder, which can automatically find the best supercell for describe the interface between two lattices

Offline sahil

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Re: magnetic tunnel junction
« Reply #20 on: April 6, 2012, 07:15 »
Thanks for your response  ;)

Offline sahil

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Re: magnetic tunnel junction
« Reply #21 on: April 10, 2012, 12:05 »
Hello to all


Any one please tell me the use of preconditioner in iteration control parameter? ???


Thanks in advance for support  8)

Offline Anders Blom

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Re: magnetic tunnel junction
« Reply #22 on: April 10, 2012, 14:23 »
You probably don't need to use it. But more information can always be found in the reference manual.

Offline 1ight0ne

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Re: magnetic tunnel junction
« Reply #23 on: April 19, 2013, 17:19 »
Hello! Can anyone tell me why TMR of structure Fe-MgO-Fe in examples is exceed 9000 % ? Does it normal and how it compare with experiment ? I saw the presentation about apply ATK in spintronics and TMR in this presentation about 2300 % What value of TMR is more correct?

Offline baizq

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Re: magnetic tunnel junction
« Reply #24 on: April 25, 2013, 11:48 »
Hi,

We may never expect the calculated TMR ratio (for Fe/MgO/Fe, several thousand percent) to be comparable to that in experiment (typically several hundred percent for (Co)Fe/MgO/(Co)/Fe). There're also quite a lot of computational work trying to explain the deviation, say, PRL 105, 236801 (2008).

The calculated MR ratio also depends on the model you use, for instance, how many MgO layers there are. TMR would differ a lot w.r.t. different number of MgO layers.

baizq