Hi,
We calculated the bandstructure of InAs slab (same as the example given on ATK tutorial). We found that the X valley is lower than the L valley, while in the bulk, it's the reverse. Existing literature (e.g. 2.6nm thick slab[1], 3nm and 5nm thick slab[2]), report using TB calculations, that the L valley is lower than the X valley, similar to the bulk case. Could you please explain this difference? Is it due to a different nomenclature used by ATK?
Best Regards,
[1] Y. Liu et al., “Band-structure effects on the performance of III-V ultrathin-body SOI MOSFETs,” IEEE Trans. Electron Devices, vol. 55, no. 5, pp. 1116–1122, 2008.
[2] Mugny, G., et al. "Band structure of III-V thin films: An atomistic study of non-parabolic effects in confinement direction," Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon ((EUROSOI-ULIS) 2015.