A question about device configuratons

[Jungger]

Dear all !
         As we know,for numerical stability reasons, in ATK there is a region inside the central region where the atom positions are fixed to match the electrodes in device configurations, these are the electrode extensions.
        So, when we dope the electode (for instance,doping the WS2 semiconductor like the image below) there must be a dopant atom in the central region .
        In this case, it is equivalent to doping the central region as well ?  In this model, what we studied is a intrinsic semiconductor or a doped semiconductor?

[Jess Wellendorff]

Your device configuration represents a thin piece of intrinsic semiconductor sandwiched between two electrodes that both contain some concentration of impurity atoms. The length of the doped electrodes is the electrode length + electrode extension length. Only the scattering region contains intrinsic semiconductor.

Please note that there is another way to introduce doping in the VNL Builder: http://docs.quantumwise.com/tutorials/nisi2-si/nisi2-si.html#dope-the-device

[Jungger]

Your device configuration represents a thin piece of intrinsic semiconductor sandwiched between two electrodes that both contain some concentration of impurity atoms. The length of the doped electrodes is the electrode length + electrode extension length. Only the scattering region contains intrinsic semiconductor.

Please note that there is another way to introduce doping in the VNL Builder: http://docs.quantumwise.com/tutorials/nisi2-si/nisi2-si.html#dope-the-device

Thanks for your advice !