Thanks.
I want to study I-V characteristics in the device structure Si/molecule/Hg. The experimental data is very interesting, where we observed sharp decrease in current near 1V and again current increases with voltage. We also did cyclic voltammetry of the deposited film,it resemblances with oxidation of molecule.Now i feel, under the bias, if molecule get oxidized, then its HOMO/LUMO will change and that will effect current flow. If it is so, how we will study the I-V using vnl.
with best regards