Dear sir,
Good morning, how to shift Dirac point of ambipolar chr. of ID VG for CNT. I wanted to shift it towards the negative x axis.
Actually, for the case, Working on 10nm cylindrical GAA CNT FET. Metal gate voltage =1.0V
Lanthanum oxide as a dielectric of 1.5nm
S/D=4nm
PIN Doping profile OR NIN Doping profile
Coming -Ambipolar behaviour
Wanted to optimize to perform better in terms of electrical parameters.
Also, how to make multiple Channels with 4X CNT for cylindrical GAA CNT FET
