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Author Topic: How to shift the Ambipolar characteristics of a GAA CNFET for ID-VG ?  (Read 1082 times)

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Offline techenthusiast

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How to shift the Ambipolar characteristics of a GAA CNFET for ID-VG ?
« on: January 2, 2025, 13:31 »
Dear experts,
Good evening, How to shift the Ambipolar characteristics of a GAA CNFET for ID-VG[Towards Negative x-axis]?
U or V shape ID -VG characteristics

Even with gradual doping of P-I-N Formation, it's coming
Source: P-type (1E+19/Cubic cm)
Channel: Intrinsic
Drain: N-type (5E+18/Cubic cm)
« Last Edit: January 10, 2025, 06:18 by techenthusiast »
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Offline techenthusiast

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Re: How to shift the Ambipolar characteristics of a GAA CNFET for ID-VG ?
« Reply #1 on: January 18, 2025, 10:41 »
Quote from: techenthusiast on January 10, 2025, 06:19
Quote from: techenthusiast on January  2, 2025, 13:31
Dear experts,
Good evening, How to shift the Ambipolar characteristics of a GAA CNFET for ID-VG[Towards Negative x-axis]?
U or V shape ID -VG characteristics

Even with gradual doping of P-I-N Formation, it's coming
Source: P-type (1E+19/Cubic cm)
Channel: Intrinsic
Drain: N-type (5E+18/Cubic cm)

Any guidance would be greatly appreciated. Thank you!

Kindly advise. Thank you.
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