Hi,
The topic on this thread made me panic since I am planning to investigate the effects of high-bias on the resistivity of the nanostructures. As a conclusion, to guarantee the error in current calculation integral remains lower, which values would be good for number of points and delta? (Of course, in exchange of computer time )
Cheers,
Serhan
Hey Serhan.
Panic is never good
If you ask me, this is always a matter of personally approach to the problem. When I am starting up calculations on a new set of systems, and in particular a system on which I wish to understand the current behavior for high biases etc, my first goal is to obtain a well converged transmission spectrum in terms of kpoints etc. From this information I observe the nature of the transmission spectrum and try to judge what kind of parameters I am going to need to get good results.
If I get a transmission spectrum like the one shown by Chris, I would except to get a IV curve of a diode, and hence I would know that I would need a lot of energies points in order to get a good current, making the calculation more costly. However as I always know from the transmission spectrum that the current would rise significant before the voltages gets quite high I might choose an non uniform sampling of the voltages:
V = [0, 1, 2, 2.5, 3, 3.5, 4.0, 4.1, 4.2, 4.3, 4.4, 4.5, 4.6, 4.7, 4.8, 4.9, 5.0]
However if I have a transmission spectrum of that of a semi-metal, like the one I showed before I know that the energy point density only need to be high for the small voltages, and when it comes to the number of voltages needed to calculate a good IV curve, I would choose many small voltages, and few high:
V = [0.0, 0.01, 0.02, 0.05, 0.1, 0.2, 0.3, 0.5, 1.0, 2.0, 4.0, 8.0]
I hope this can help you.