But, if there is no gate....we can take FFT2D. Now In that case, if the channel is a nano-ribbon, then what will be the boundary conds. for A and B directions??
I just wanted to alter this old question.... a little bit..., simply for the sake of better clarity......
____________
1) Say, for the two port device.... which is made of a 2-D channel (
it's a sheet ...meaning the structure is periodic along the width)... 'C' is the transport direction...and 'B' is the width.... (obviously 'A' is one layer thin or thick)..../ As there is no gate ..... What should be the boundary conditions?? ___ Is it.... A, B, C --> Neumann, Neumann, Dirichlet...?
More importantly,
then how that is different from the 1-D case..... where I made the
struct. such that...in 'B' direction the channel is not continuous (prior to applying the A, B, C --> Neumann, Neumann, Dirichlet boundary conditions...)...?
2) Next, considering a diff. case___ say a device with the gate___ / What should be boundary cond. along the direction 'A'....? Now, here is the gate...where I have applied a vertical E-filed...!!
I find various suggestions (looking at the previously discussed topics) for such a case....though they are not essentially the same...!!!
http://quantumwise.com/forum/index.php?topic=1512.msg7502#msg7502http://quantumwise.com/forum/index.php?topic=1597.0Regards_
Dipankar