Back-gated FET

[Adila]

1) I am working on Armchair GNR FET with back-gate. However, I am not sure if my structure is correct or not. Is my structure a back-gate or top-gate FET? Here I attach the configuration "Device_ac88.py".

2) Then, I would like to bias my structure with 2 V bias voltage at the right electrode. I am not sure where should I change the bias voltage. Should I change the right electrode voltage at the Script Generator (New Calculator) or at the Analysis (IVCurve)? Here I attach two pictures of the setting in VNL window, "New Calculator.png" and "IVCurve.png".

[Umberto Martinez]

check the "graphene device tutorial" here http://quantumwise.com/documents/tutorials/latest/GrapheneDevice/index.html
you may want to add a dielectric region.

If you want to apply  2V bias voltage change the right electrode voltage parameter in the New Calculator.

If you change it in the IV curve analysis means that you will run 101 (!!!!) calculations to span from 0V to 2V bias voltages and plot the IV curve.
cf. http://www.quantumwise.com/documents/manuals/latest/ReferenceManual/index.html/ref.ivcurve.html
and http://quantumwise.com/documents/manuals/latest/VNLTutorial/index.html/chap.gnr.html#sect1.gnr.ivcalculation

[Adila]

Thank you for your comment. Another question, what is the difference between the positive and negative voltage biased at the metal gate? From the tutorial, it uses negative voltage. However, I'm using positive voltage.