Hello,
The procedure of building a gate is shown in the Graphene Device Tutorial
http://quantumwise.com/documents/tutorials/latest/GrapheneDevice/index.html/index.html and the physical parameters (area and dielectric constant) is defined without noting the reason. So I am wondering if the thickness and area of dielectric region and metallic region would affect the the results, such as Effect of the Gate Potential. If there is any tutorial or reference about building gate parameters. I would be highly appreciated for it.
