Hi all:
1. i want to add the gate potential to the i-v curve of a two-prole system, the channel is a thin slab like MoS2, its length along z is about 40 angstrom, i am wondersing what is the maxmum gate can be? in some experiments, the gate potential can be increased to 30 V, but in this experiments, the dielectric thickness is about 70 ansgtrom. in my calculation, its channel is about several um, but in my DFT calculation, it is impossible to simulate such huge system, so i am wondering for my small system, what is safe the safe gate value and the cossponding dielectric region thickness.
thanks very much !
