I have solved the problem.
Thanks for all of you who helped me on this problem. I have learned a lot from you and I began to have some ideas on how to get information from the manual and write scripts of my own for a certain analysis.
However, I have another question on the EDP along z direction. I posted a topic named "What's wrong with my ElectrostaticDifferencePotential result?". For the EDP calculation, the bias was set to (0.1V, 0V) for the left electrode and right electrode, respectively. However, the potential did not end at the electrode at the preset values. Please see attached figures, can any of you help me with this problem?
The device configurations for hdp9nm.png and hdp9nm_doping.png are the same. I doped the left part of the device (semiconductor part) for hdp9nm_doping with a n-doping level of 5*10^19 in order to shorten the screening length of the semiconductor part. It's the only difference between them. The bias for the EDP calculation was set to (0.1V, 0V). However, both of the figures did not end at the left electrode at 0.1V (or -0.1V). For hdp9nm, it ends at about 0.4 while for hdp9nm_doping, it ends at 1.0. I don't know why.
I appreciate you if you can help me with this problem.