Increasing the temperature may have a rather complex effect on the band structure and DOS, and it also depends on the material of study, e.g., metal, semiconductor or insulator.
For example, if you want to include the effect of thermal disorder on the DOS, you may then adopt the special thermal displacement (STD) method, see
https://docs.quantumwise.com/manuals/Types/SpecialThermalDisplacement/SpecialThermalDisplacement.html and references therein. In this case, the bands will be broadened by disorder.
Note that you have to use a supercell approach for the STD method, meaning that the bands will be folded onto a smaller Brillouin zone (BZ), compared to the BZ for the primitive cell of your crystalline material.
