Dear Prof.
I followed tutorials of Silicon and tried building my own InSe TB model, however, I didn't completely catch physical meaning in Silicon case, its about determination of occupations in spds* basis and orbital-chosen in hatree potentials. For example, Bassani's parameters of As atom in library(basis: spds*) do not show same Si occupation of # number_of_valence_electrons = 4, occupations= [0.4, 1.2, 2.0, 0.4] in other elements? if so how to attain, e.g. As, occupations=[ 1.577 , 3.012 , 0.204 , 0.067 ]?
arsenic_onsite_term = SlaterKosterOnsiteParameters(
element=PeriodicTable.Arsenic,
angular_momenta=[ 0 , 1 , 2 , 0 ],
occupations=[ 1.577 , 3.012 , 0.204 , 0.067 ], <====Q1.
filling_method=SphericalSymmetric,
ionization_potential=[ -5.9801*eV , 3.5813*eV , 12.1954*eV , 17.8411*eV ],
onsite_hartree_shift=[ 7.81664*eV , 7.81664*eV , 7.81664*eV , 7.81664*eV ], <====Q2
onsite_spin_split=[[-0.619, -0.43145, -0.43145, -0.619], [-0.43145, -0.3804, -0.3804, -0.43145], [-0.43145, -0.3804, -0.3804, -0.43145], [-0.619, -0.43145, -0.43145, -0.619]]*eV,
onsite_spin_orbit_split=[0.0, 0.3526, 0.0, 0.0]*eV, <=====Q3
vacuum_level=0.0*Hartree,
)
Second and third Quiz is. Why/How hartree or spin_split are determined by[ "?p", "?p", "?p", "?s"]
instead of basis assumption of ["3s", "3p", "3d", "3s"] in ionization_potential, and how to read ["3p"], 'ncp' in Si tutorials?
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onsite_hartree_shift=ATK_U(PeriodicTable.Silicon, ["3p"], 'ncp')[0],
onsite_spin_split=ATK_W(PeriodicTable.Silicon, [ "3p", "3p", "3p", "3s" ]),
+++++++++++++++++++++++++++++++++++++++++++++
thank you for your kind assistance and waiting for your reply