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Author Topic: Is it possible to simulate MoS2 FET (2um channel length) in ATK?  (Read 3942 times)

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Offline aaskar

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Is it possible to simulate MoS2 FET (2um channel length) in ATK?
« on: May 13, 2020, 01:46 »
Hello,

I am quite new to ATK.

I am wondering if I have a FET device (2um channel length, and 10 um channel width) made of a few layers (10 nm) MoS2 thick exfoliated layer, contacted at source and drain with gold contact, and the gate is applied through a global gate through the substrate (standard 300 nm SiO2/highly doped Si). Is such a device something I can simulate in ATK? I am mainly interested in the electrical output of the device, Ids Vs. Vds, and so on.

Please if there are examples, I would appreciate sharing them with me.

Thanks,
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Offline mlee

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Re: Is it possible to simulate MoS2 FET (2um channel length) in ATK?
« Reply #1 on: May 13, 2020, 08:05 »
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