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General Questions and Answers / Re: Dopant diffusion simulation in crystal Si
« on: December 1, 2023, 21:35 »
1. Yes
2. Definitely use Active Learning because you dopant needs to move to many different locations in the crystal not captured by the simple "shake and twist" protocol in Batch (move atoms around a bit, change unit cell szie and shape a bit). You need to explore regions of the PES far from equilibrium for the NEBs to be accurate. Notably, in the newest version you can actually do active learning on the NEB itself though, that might save a lot of time!
3. Eh, not yet...
4. Really? Maybe share some data with us, so we can check. You could try to use a smaller basis_size of course. But don't try to include all dopants at once, that will be too many elements.
2. Definitely use Active Learning because you dopant needs to move to many different locations in the crystal not captured by the simple "shake and twist" protocol in Batch (move atoms around a bit, change unit cell szie and shape a bit). You need to explore regions of the PES far from equilibrium for the NEBs to be accurate. Notably, in the newest version you can actually do active learning on the NEB itself though, that might save a lot of time!
3. Eh, not yet...
4. Really? Maybe share some data with us, so we can check. You could try to use a smaller basis_size of course. But don't try to include all dopants at once, that will be too many elements.