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Author Topic: Source Exhaustion Effects  (Read 2784 times)

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Offline techenthusiast

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Source Exhaustion Effects
« on: April 1, 2025, 07:51 »
Dear Experts,

Good morning, hope you are doing well. I have gone through these articles. Here they have mentioned Source Exhaustion Effects. I am enclosing my device structure so that can be comparable with the provided device structure at the literature. Especially for single channel device.  is it correct , the device structure?

https://sci-hub.st/10.1109/iedm.2009.5424281

https://ece.uwaterloo.ca/~l28wei/publications/2011TED_CNT.pdf

« Last Edit: April 1, 2025, 07:59 by techenthusiast »
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Offline techenthusiast

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Re: Source Exhaustion Effects
« Reply #1 on: April 2, 2025, 06:46 »
Dear Experts,

Is there any effects, in such cases for different VDS studies?

For example for the same device VDS=0.1,1.0,0.8?
How should it behave as IV Analyzer?


Why 0.05V VDS is not working for GAA CNT FET -- Does not provide suitable ID -VGS
« Last Edit: April 3, 2025, 13:12 by techenthusiast »
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Offline techenthusiast

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Probably the convergence problem during execution_Reg.
« Reply #2 on: April 7, 2025, 12:21 »
Is it possible in a conventional case?  For lower VDS up to =0.15V (along with VDS=0.15,0.3,0.4,0.5,0.8,1V) is giving somewhat acceptable results whereas VDS=0.05V (for the same device) doesn't provide suitable results. Maybe because of the convergence problem during execution. Kindly share yours's viewpoints.
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