« previous next »
Pages: [1]   Go Down

Author Topic: Source Exhaustion Effects  (Read 1226 times)

0 Members and 1 Guest are viewing this topic.

Offline techenthusiast

  • Heavy QuantumATK user
  • ***
  • Posts: 32
  • Country: in
  • Reputation: 0
    • View Profile
Source Exhaustion Effects
« on: April 1, 2025, 07:51 »
Dear Experts,

Good morning, hope you are doing well. I have gone through these articles. Here they have mentioned Source Exhaustion Effects. I am enclosing my device structure so that can be comparable with the provided device structure at the literature. Especially for single channel device.  is it correct , the device structure?

https://sci-hub.st/10.1109/iedm.2009.5424281

https://ece.uwaterloo.ca/~l28wei/publications/2011TED_CNT.pdf

« Last Edit: April 1, 2025, 07:59 by techenthusiast »
Logged

Offline techenthusiast

  • Heavy QuantumATK user
  • ***
  • Posts: 32
  • Country: in
  • Reputation: 0
    • View Profile
Re: Source Exhaustion Effects
« Reply #1 on: April 2, 2025, 06:46 »
Dear Experts,

Is there any effects, in such cases for different VDS studies?

For example for the same device VDS=0.1,1.0,0.8?
How should it behave as IV Analyzer?


Why 0.05V VDS is not working for GAA CNT FET -- Does not provide suitable ID -VGS
« Last Edit: April 3, 2025, 13:12 by techenthusiast »
Logged
Pages: [1]   Go Up
« previous next »